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1. product profile 1.1 general description npn high-voltage low v cesat breakthrough in small signal (biss) transistor in a small sot23 (to-236ab) surface-mounted device (smd) plastic package. 1.2 features and benefits ? high voltage ? low collector-emitter sa turation voltage v cesat ? high collector curr ent capability i c and i cm ? high collector cu rrent gain (h fe ) at high i c ? aec-q101 qualified ? small smd plastic package 1.3 applications ? led driver for led chain module ? lcd backlighting ? automotive power management ? hook switch for wired telecom ? switch mode power supply (smps) 1.4 quick reference data [1] pulse test: t p 300 s; ? 0.02. PBHV8118T 180 v, 1 a npn high-voltage low v cesat (biss) transistor rev. 01 ? 7 may 2010 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit v ceo collector-emitter voltage open base - - 180 v i c collector current - - 1 a h fe dc current gain v ce =10v; i c =50ma [1] 100 250 -
PBHV8118T all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 7 may 2010 2 of 13 nxp semiconductors PBHV8118T 180 v, 1 a npn high-voltage low v cesat (biss) transistor 2. pinning information 3. ordering information 4. marking [1] * = -: made in hong kong * = p: made in hong kong * = t: made in malaysia * = w: made in china table 2. pinning pin description simplified outline graphic symbol 1base 2emitter 3 collector 12 3 sym02 1 3 2 1 table 3. ordering information type number package name description version PBHV8118T - plastic surface-mounted package; 3 leads sot23 table 4. marking codes type number marking code [1] PBHV8118T lz*
PBHV8118T all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 7 may 2010 3 of 13 nxp semiconductors PBHV8118T 180 v, 1 a npn high-voltage low v cesat (biss) transistor 5. limiting values [1] device mounted on an fr4 printed-circuit board ( pcb), single-sided copper, tin-plated and standard footprint. table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cbo collector-base voltage open emitter - 400 v v ceo collector-emitter voltage open base - 180 v v ebo emitter-base voltage open collector - 6 v i c collector current - 1 a i cm peak collector current single pulse; t p 1ms -2a i bm peak base current single pulse; t p 1ms -400ma p tot total power dissipation t amb 25 c [1] -300mw t j junction temperature - 150 c t amb ambient temperature ? 55 +150 c t stg storage temperature ? 65 +150 c fr4 pcb, standard footprint fig 1. power derating curve t amb ( c) ? 75 175 125 25 75 ? 25 006aab150 200 100 300 400 p tot (mw) 0
PBHV8118T all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 7 may 2010 4 of 13 nxp semiconductors PBHV8118T 180 v, 1 a npn high-voltage low v cesat (biss) transistor 6. thermal characteristics [1] device mounted on an fr4 pcb, single-si ded copper, tin-plated and standard footprint. table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air [1] - - 417 k/w r th(j-sp) thermal resistance from junction to solder point --70k/w fr4 pcb, standard footprint fig 2. transient thermal impedance from junction to am bient as a function of pu lse duration; typical values 006aab151 10 1 10 2 10 3 z th(j-a) (k/w) 10 ? 1 10 ? 5 10 10 ? 2 10 ? 4 10 2 10 ? 1 t p (s) 10 ? 3 10 3 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0
PBHV8118T all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 7 may 2010 5 of 13 nxp semiconductors PBHV8118T 180 v, 1 a npn high-voltage low v cesat (biss) transistor 7. characteristics [1] pulse test: t p 300 s; ? 0.02. table 7. characteristics t amb =25 c unless otherwise specified. symbol parameter conditions min typ max unit i cbo collector-base cut-off current v cb =144v; i e = 0 a - - 100 na v cb =144v; i e =0a; t j = 150 c --10 a i ces collector-emitter cut-off current v ce =144v; v be = 0 v - - 100 na i ebo emitter-base cut-off current v eb =4v; i c = 0 a - - 100 na h fe dc current gain v ce =10v [1] i c = 50 ma 100 250 - i c = 100 ma 100 250 - i c = 0.5 a 50 100 - v cesat collector-emitter saturation voltage i c = 100 ma; i b =10ma [1] - 4060mv i c = 100 ma; i b =20ma [1] - 3350mv v besat base-emitter saturation voltage i c = 0.5 a; i b =100ma [1] -11.2v t d delay time v cc =6v; i c =0.5a; i bon = 0.1 a; i boff = ? 0.1 a -7-ns t r rise time - 565 - ns t on turn-on time - 572 - ns t s storage time - 1320 - ns t f fall time - 740 - ns t off turn-off time - 2060 - ns f t transition frequency v ce =10v; i c =10ma; f = 100 mhz -30-mhz c c collector capacitance v cb =20v; i e =i e =0a; f=1mhz -5.7-pf c e emitter capacitance v eb =0.5v; i c =i c =0a; f=1mhz - 150 - pf
PBHV8118T all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 7 may 2010 6 of 13 nxp semiconductors PBHV8118T 180 v, 1 a npn high-voltage low v cesat (biss) transistor v ce =10v (1) t amb = 100 c (2) t amb =25 c (3) t amb = ? 55 c t amb =25 c fig 3. dc current gain as a function of collector current; typical values fig 4. collector current as a function of collector-emitter voltage; typical values v ce =10v (1) t amb = ? 55 c (2) t amb =25 c (3) t amb = 100 c i c /i b =5 (1) t amb = ? 55 c (2) t amb =25 c (3) t amb = 100 c fig 5. base-emitter voltage as a function of collector current; typical values fig 6. base-emitter saturation voltage as a function of collector current; typical values 006aac366 200 300 100 400 500 h fe 0 i c (ma) 10 ? 1 10 4 10 3 110 2 10 (1) (3) (2) v ce (v) 0.0 5.0 4.0 2.0 3.0 1.0 006aac367 1.0 0.5 1.5 2.0 i c (a) 0.0 256 224 192 160 128 i b (ma) = 320 96 64 32 288 006aac368 0.4 0.8 1.2 v be (v) 0 i c (ma) 10 ? 1 10 4 10 3 110 2 10 (2) (1) (3) 006aac369 0.5 0.9 1.3 v besat (v) 0.1 i c (ma) 10 ? 1 10 4 10 3 110 2 10 (2) (1) (3)
PBHV8118T all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 7 may 2010 7 of 13 nxp semiconductors PBHV8118T 180 v, 1 a npn high-voltage low v cesat (biss) transistor i c /i b =5 (1) t amb = 100 c (2) t amb =25 c (3) t amb = ? 55 c t amb =25 c (1) i c /i b =20 (2) i c /i b =10 (3) i c /i b =5 fig 7. collector-emitter saturation voltage as a function of collector current; typical values fig 8. collector-emitter saturation voltage as a function of collector current; typical values i c /i b =5 (1) t amb = 100 c (2) t amb =25 c (3) t amb = ? 55 c t amb =25 c (1) i c /i b =20 (2) i c /i b =10 (3) i c /i b =5 fig 9. collector-emitter saturation resistance as a function of collector current; typical values fig 10. collector-emitter saturation resistance as a function of collector current; typical values 006aac370 10 ? 1 10 ? 2 1 v cesat (v) 10 ? 3 i c (ma) 10 ? 1 10 4 10 3 110 2 10 (1) (2) (3) 006aac371 i c (ma) 10 ? 1 10 4 10 3 110 2 10 10 ? 2 10 ? 1 1 10 v cesat (v) 10 ? 3 (2) (1) (3) 006aac372 i c (ma) 10 ? 1 10 4 10 3 110 2 10 1 10 10 2 10 3 r cesat ( ) 10 ? 1 (1) (2) (3) 006aac373 i c (ma) 10 ? 1 10 4 10 3 110 2 10 1 10 10 2 10 3 r cesat ( ) 10 ? 1 (1) (2) (3)
PBHV8118T all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 7 may 2010 8 of 13 nxp semiconductors PBHV8118T 180 v, 1 a npn high-voltage low v cesat (biss) transistor 8. test information 8.1 quality information this product has been qualified in accordance with the automotive electronics council (aec) standard q101 - stress test qualificat ion for discrete semiconductors , and is suitable for use in automotive applications. 9. package outline 10. packing information [1] for further information and the avai lability of packing methods, see section 14 . fig 11. test circuit for switching times r c r2 r1 dut mlb826 v o r b (probe) 450 (probe) 450 oscilloscope oscilloscope v bb v i v cc fig 12. package outline sot23 (to-236ab) 04-11-04 dimensions in mm 0.45 0.15 1.9 1.1 0.9 3.0 2.8 2.5 2.1 1.4 1.2 0.48 0.38 0.15 0.09 12 3 table 8. packing methods the indicated -xxx are the last thre e digits of the 12nc ordering code. [1] type number package description packing quantity 3000 10000 PBHV8118T sot23 4 mm pitch, 8 mm tape and reel -215 -235
PBHV8118T all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 7 may 2010 9 of 13 nxp semiconductors PBHV8118T 180 v, 1 a npn high-voltage low v cesat (biss) transistor 11. soldering fig 13. reflow soldering footprint sot23 (to-236ab) fig 14. wave soldering footprint sot23 (to-236ab) solder lands solder resist occupied area solder paste sot023_ fr 0.5 (3 ) 0.6 (3 ) 0.6 (3 ) 0.7 (3 ) 3 1 3.3 2.9 1.7 1.9 2 dimensions in mm solder lands solder resist occupied area preferred transport direction during soldering sot023_ fw 2.8 4.5 1.4 4.6 1.4 (2 ) 1.2 (2 ) 2.2 2.6 dimensions in mm
PBHV8118T all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 7 may 2010 10 of 13 nxp semiconductors PBHV8118T 180 v, 1 a npn high-voltage low v cesat (biss) transistor 12. revision history table 9. revision history document id release date data sheet status change notice supersedes PBHV8118T v.1 20100507 product data sheet - -
PBHV8118T all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 7 may 2010 11 of 13 nxp semiconductors PBHV8118T 180 v, 1 a npn high-voltage low v cesat (biss) transistor 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 13.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 13.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
PBHV8118T all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 7 may 2010 12 of 13 nxp semiconductors PBHV8118T 180 v, 1 a npn high-voltage low v cesat (biss) transistor quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comple te, exhaustive or legally binding. 13.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors PBHV8118T 180 v, 1 a npn high-voltage low v cesat (biss) transistor ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 7 may 2010 document identifier: PBHV8118T please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 15. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 8.1 quality information . . . . . . . . . . . . . . . . . . . . . . 8 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 packing information . . . . . . . . . . . . . . . . . . . . . 8 11 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 11 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 13.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 14 contact information. . . . . . . . . . . . . . . . . . . . . 12 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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